By Klin M., Rucker Ch.

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Note that the word bootstrapping and NWL, which have been commonly used for modern DRAMs, will also improve the design flexibility of the 3-T and 6-T cells, as discussed earlier. In the long run, high-speed, high-density non-volatile RAMs [2] show strong potential for use as low-voltage RAMs. In particular, they have leakage-free and softerror-free structures, and the non-destructive read-out and non-charge-based operations that they could provide are attractive in terms of achieving fast cycle times, low power with zero standby power, and stable operation, even at a lower Simple planar structures, if possible, would cut costs.

Helms, E. Schmidt, and W. Nebel the solution to leakage problems for future technologies, but the recent and upcoming technologies have to be controlled by more conventional, less invasive optimizations. As on lowest levels a lot of optimization was proposed, higher level approaches addressing leakage are missing so far. References 1. net/ 2. A Chandrakasan, W Bowhill, F Fox: Design of High-Performance Microprocessor Circuits. IEEE Press, 2001. 3. A Keshavarzi, K Roy, C F Hawkins: Intrinsic Leakage in Low Power Deep Submicron CMOS ICs.

Review and prospects of low-voltage RAM circuits,” IBM J. R & D, vol. 47, no. 5/6, pp. /Nov. 2003. T. , “A Resume-Standby Application Processor for 3G Cellular Phones,” 2004 ISSCC Dig. Tech. Papers, pp. 336-337, Feb. 2004. M. , “A 300 MHz Leakage On-Chip SRAM Module Featuring Process-Variation Immunity and Low-Leakage-Active Mode for Mobile-Phone Application Processor,” 2004 ISSCC Dig. Tech. Papers, pp. 494-495, Feb. 2004. K. 5ns tRC 16Mb Embedded DRAM,” 2004 ISSCC Dig. Tech. Papers, pp. 494-495, Feb.

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Algebraic Combinations in Mathematical Chemistry: Methods and Algorithms by Klin M., Rucker Ch.

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