By Hugo De Man (auth.), Enrico Macii, Vassilis Paliouras, Odysseas Koufopavlou (eds.)
WelcometotheproceedingsofPATMOS2004,thefourteenthinaseriesofint- nationwide workshops. PATMOS 2004 used to be geared up by way of the collage of Patras with technical co-sponsorship from the IEEE Circuits and structures Society. through the years, the PATMOS assembly has advanced into an enormous - ropean occasion, the place and academia meet to debate strength and timing elements in sleek built-in circuit and procedure layout. PATMOS offers a discussion board for researchers to debate and examine the rising demanding situations in - signal methodologies and instruments required to advance the impending generations of built-in circuits and structures. We learned this imaginative and prescient this yr by means of offering a technical software that contained state of the art technical contributions, a keynote speech, 3 invited talks and embedded tutorials. The technical software considering timing, functionality and gear intake, in addition to architectural features, with specific emphasis on modelling, layout, charac- rization, research and optimization within the nanometer period. This yr a list 152 contributions have been got to be thought of for p- sible presentation at PATMOS. regardless of the alternative for an extreme three-day m- ting, in simple terms fifty one lecture papers and 34 poster papers may be accommodated within the single-track technical application. The Technical application Committee, with the - sistance of extra specialist reviewers, chosen the eighty five papers to be provided at PATMOS and arranged them into thirteen technical classes. As was once the case with the PATMOS workshops, the assessment method was once nameless, complete papers have been required, and a number of other stories have been acquired in step with manuscript.
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Note that the word bootstrapping and NWL, which have been commonly used for modern DRAMs, will also improve the design flexibility of the 3-T and 6-T cells, as discussed earlier. In the long run, high-speed, high-density non-volatile RAMs  show strong potential for use as low-voltage RAMs. In particular, they have leakage-free and softerror-free structures, and the non-destructive read-out and non-charge-based operations that they could provide are attractive in terms of achieving fast cycle times, low power with zero standby power, and stable operation, even at a lower Simple planar structures, if possible, would cut costs.
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Review and prospects of low-voltage RAM circuits,” IBM J. R & D, vol. 47, no. 5/6, pp. /Nov. 2003. T. , “A Resume-Standby Application Processor for 3G Cellular Phones,” 2004 ISSCC Dig. Tech. Papers, pp. 336-337, Feb. 2004. M. , “A 300 MHz Leakage On-Chip SRAM Module Featuring Process-Variation Immunity and Low-Leakage-Active Mode for Mobile-Phone Application Processor,” 2004 ISSCC Dig. Tech. Papers, pp. 494-495, Feb. 2004. K. 5ns tRC 16Mb Embedded DRAM,” 2004 ISSCC Dig. Tech. Papers, pp. 494-495, Feb.
Integrated Circuit and System Design. Power and Timing Modeling, Optimization and Simulation: 14th International Workshop, PATMOS 2004, Santorini, Greece, September 15-17, 2004. Proceedings by Hugo De Man (auth.), Enrico Macii, Vassilis Paliouras, Odysseas Koufopavlou (eds.)